IRFPS37N50APBF View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

Manufacturer

IRFPS37N50APBF

Power MOSFET

Vishay Semiconductors 

IRFPS37N50A, SiHFPS37N50A

Vishay Siliconix

100000

10000

V GS = 0V,

f = 1MHz

Ciss = C gs + C gd, C dsSHORTED

Crss = C gd

Coss = C ds + C gd

Ciss

1000

Coss

100

Crss

10

1

A

10

100

1000

VDS , Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

1000

100

TJ = 150° C

10

TJ = 25° C

1

0.1

0.2

VGS = 0 V

0.4

0.6

0.8

1.0

1.2

1.4

VSD ,Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 ID = 36A

16

12

VDS = 400V

VDS = 250V

VDS = 100V

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

0

40

80

120

160

200

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

1000

OPERATION IN THIS AREA LIMITED

BY RDS(on)

100

10us

100us

10

1ms

TC = 25°C

TJ = 150°C

Single Pulse

1

10

100

10ms

1000

VDS , Drain-to-Source Voltage (V)

10000

Fig. 8 - Maximum Safe Operating Area

www.vishay.com

4

Document Number: 91258

S11-0111-Rev. C, 07-Feb-11

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