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IS62LV256-70RT View Datasheet(PDF) - Integrated Silicon Solution

Part Name
Description
Manufacturer
IS62LV256-70RT
ISSI
Integrated Silicon Solution ISSI
IS62LV256-70RT Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IS62LV256
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VTERM
TBIAS
TSTG
PT
IOUT
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
Unit
–0.5 to +4.6
V
–55 to +125
°C
–65 to +150
°C
0.5
W
20
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
VCC
3.3V ± 5%
3.3V ± 5%
ISSI ®
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage(1)
ILI
Input Leakage
ILO
Output Leakage
Test Conditions
VCC = Min., IOH = –1.0 mA
VCC = Min., IOL = 2.1 mA
GND VIN VCC
GND VOUT VCC, Outputs Disabled
Com.
Ind.
Com.
Ind.
Min.
2.4
2.2
–0.3
–2
–5
–2
–5
Max.
0.4
VCC + 0.3
0.8
2
5
2
5
Notes:
1. VIL = –3.0V for pulse width less than 10 ns.
2. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
Unit
V
V
V
V
µA
µA
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
3
Rev. K
12/11/02

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