IXGX50N60C2D1 View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
Manufacturer
IXGX50N60C2D1 Datasheet PDF : 6 Pages
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Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
IC = 40 A; VCE = 10 V,
Note 1
VCE = 25 V, VGE = 0 V, f = 1 MHz
40 51
S
3700
pF
290
pF
50
pF
IC = 40 A, VGE = 15 V, VCE = 0.5 VCES
138
nC
25
nC
40
nC
Inductive load, TJ = 25°C
IC = 40 A, VGE = 15 V
VCE = 480 V, RG = Roff = 2.0 Ω
Inductive load, TJ = 125°C
IC = 40 A, VGE = 15 V
VCE = 480 V, RG = Roff = 2.0 Ω
18
ns
25
ns
115 150 ns
48
ns
0.38 0.7 mJ
18
ns
25
ns
1.4
mJ
170
ns
60
ns
0.74
mJ
0.31 K/W
0.15
K/W
IXGK 50N60C2D1
IXGX 50N60C2D1
TO-264 AA Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00 0.25
20.32 20.83
2.29 2.59
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
PLUS247 Outline
Inches
Min. Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020 1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IF = 60 A, VGE = 0 V,
Note 1
TJ = 150°C
2.1 V
1.4
IRM
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C
8.3 A
VR = 100 V
trr
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
35
ns
RthJC
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
0.65 K/W
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e
5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
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