KTA2014 View Datasheet(PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

Part Name

Description

Manufacturer

KTA2014

TRANSISTOR (PNP)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

KTA2014

TRANSISTOR (PNP)

FEATURES

z Low frequency power amplifier application

z Power switching application

SOT-323

1. BASE

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-50

V

VCEO

Collector-Emitter Voltage

-50

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current –Continuous

150

mA

PC*

Collector Power Dissipation

100

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Noise Figure

Symbol

Test conditions

V(BR)CBO IC=- 0.1mA, IE=0

V(BR)CEO IC= -1mA, IB=0

V(BR)EBO IE=-0.1mA, IC=0

ICBO

VCB=-50V, IE=0

IEBO

VEB= -5V, IC=0

hFE

VCE=-6V,IC=-2mA

VCE(sat)

fT

Cob

NF

IC=-100mA, IB= -10mA

VCE=-10V, IC=-1mA,

VCB=-10V, IE=0

f=1MHz

VCE=-6V, IC=-0.1mA

f=1KHz,Rg=10KΩ

MIN

TYP

MAX UNIT

-50

V

-50

V

-5

V

-0.1

μA

-0.1

μA

70

400

-0.3

V

80

MHz

7

pF

10

dB

CLASSIFICATION OF hFE

Rank

Range

MARKING

O(2)

70-140

SO

Y(4)

120-240

SY

GR(6)

200-400

SG

１　

JinYu

semiconductor

www.htsemi.com

Ｄａｔｅ：２０１１／０５

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