L6560 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
L6560 Datasheet PDF : 11 Pages
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L6560 - L6560A
Figure 3: Typical Application Circuit (100W)
BRIDGE
+ 4 x BY255
FUSE 4A/250V
-
Vac
(85V to 135V)
C1
1µF
250V
T
C6
R3 D3 1N4150
R2
68K 5%
D2
1N5248B
100 5%
10nF
R1 68K 5%
C3 330nF
R9
1.5M
1%
R10
16K
1%
C2
22µF
25V
8
3
C7
10nF
5
2
1
L6560
7
6
4
C4
1nF
TRANSFORMER
T: core THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT
primary 90T of Litz wire 10 x 0.2mm
secondary 11T of #27 AWG (0.15mm)
gap 1.9mm for a total primary inductance of 0.6mH
D1 BYT03-400
R7
1.5M
1%
R5 10
MOS
IRF740
R4 330
R6
0.33
1W
R8
16K
1%
D94IN050B
+
Vo=240V
Po=100W
C5
150µF
315V
-
Figure 4: Typical Application Circuit (120W)
BRIDGE
+ 4 x BY255
FUSE 4A/250V
-
Vac
(175V to 265V)
C1
1µF
400V
T
C6
R3 D3 1N4150
R2
220K 5%
D2
1N5248B
100 5%
4.7nF
R1 68K 5%
C3 1µF
R9
1.8M
1%
R10
6.2K
1%
C2
22µF
25V
8
3
C7
10nF
5
2
1
L6560
7
6
4
C4
1nF
TRANSFORMER
T: core THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT
primary 90T of Litz wire 10 x 0.2mm
secondary 7T of #27 AWG (0.15mm)
gap 1.25mm for a total primary inductance of 0.8mH
D1 BYT13-600
R7
1M
1%
R5 10
MOS
STP8NA50
R4 330
R6
0.4
1W
R8
6.34K
1%
D94IN049A
+
Vo=400V
Po=120W
C5
47µF
450V
-
6/11
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