NTE102A View Datasheet(PDF) - NTE Electronics

Part Name

Description

Manufacturer

NTE102A

NTE102A (PNP) & NTE103A (NPN) Germanium Complementary Transistors Medium Power Amplifier

NTE Electronics 

NTE102A (PNP) & NTE103A (NPN)

Germanium Complementary Transistors

Medium Power Amplifier

Description:

The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type

package designed for use as a medium power amplifier.

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V

Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A

Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650mW

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +90°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +90°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector–Base Voltage

Collector Cutoff Current

DC Current Gain

Common–Emitter Cutoff Frequency

Collector–Emitter Saturation Voltage

Noise Figure

VCBO

ICBO

hFE1

hFE2

fαe

VCE(sat)

NF

IC = 200µA, IE = 0

VCB = 10V, IE = 0

VCB = 0, IE = 50mA

VCB = 0, IE = 300mA

VCB = 2V, IE = 10mA

IC = 500mA, IB = 50mA

VCB = 5V, IE = 5mA, f = 1kHz

Min Typ Max Unit

32 – – V

– – 25 µA

63 – 295

69 – 273

10 – – kHz

– 0.17 – V

– – 25 dB

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