NTE121 View Datasheet(PDF) - NTE Electronics
Part Name
Description
Manufacturer
NTE121 Datasheet PDF : 2 Pages
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NTE121
Germanium PNP Transistor
Audio Frequency Power Amplifier
Description:
The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an
audio frequency power output amplifier.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage (RBE = 68Ω), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Power Dissipation (TC ≤ +55°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C
Note 1. Matched pairs are available upon request (NTE121MP). Matched pairs have their gain
specification (hFE) matched to within 10% of each other.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Emitter Breakdown Voltage V(BR)CER IC(peak) = –0.6A, RBE = 68Ω
Collector Cutoff Current
ICBO VCB = 30V, IE = 0
DC Current Gain
Base–Emitter Input Voltage
hFE VCE = 2V, IC = 20mA
VBE VCE = 2V, IC = 1A
Collector–Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 1A
Transition Frequency
fT
VCB = 2V, IE = 1A
Min Typ Max Unit
45 –
–
V
–
– 0.5 mA
50 90 165
– 0.38 –
V
– 0.3 –
V
– 300 – kHz
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