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M1025-1026 View Datasheet(PDF) - Analog Devices

Part Name
Description
Manufacturer
M1025-1026
ADI
Analog Devices ADI
M1025-1026 Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
ADM1025/ADM1025A–SPECIFICATIONS (TA = TMIN to TMAX, VCC = VMIN to VMAX, unless otherwise noted.)
Parameter
Min Typ Max Unit Test Conditions/Comments
POWER SUPPLY
Supply Voltage, VCC
Supply Current, ICC
3.0 3.30 5.5
V
(Note 1)
1.4
2.5
mA
Interface Inactive, ADC Active
32
500
µA
Standby Mode (Note 2)
TEMPERATURE-TO-DIGITAL CONVERTER
Internal Sensor Accuracy
Resolution
External Diode Sensor Accuracy
Resolution
Remote Sensor Source Current
±3
°C
1
°C
±5
°C
±3
°C
60°C TA 100°C; VCC = 3.3 V
1
°C
180
µA
High Level
11
µA
Low Level
ANALOG-TO-DIGITAL CONVERTER
(INCLUDING MUX AND ATTENUATORS)
Total Unadjusted Error, TUE
±2
Differential Nonlinearity, DNL
±1
Power Supply Sensitivity
±1
Conversion Time (Analog Input or Internal Temperature)
11.6
Conversion Time (External Temperature)
34.8
Input Resistance (2.5 V, 3.3 V, 5 V, 12 V, VCCPIN)
100 140 250
OPEN-DRAIN DIGITAL OUTPUT ADD/RST/INT/NTO
Output Low Voltage, VOL
High Level Output Leakage Current, IOH
RST Pulsewidth
0.4
0.1
1
20
45
%
(Note 3)
LSB
%/V
ms
(Note 4)
ms
(Note 4)
k
V
IOUT = –6.0 mA; VCC = 3 V
µA
VOUT = VCC; VCC = 3 V
ms
OPEN-DRAIN SERIAL DATA BUS OUTPUT (SDA)
Output Low Voltage, VOL
High Level Output Leakage Current, IOH
SERIAL BUS DIGITAL INPUTS (SCL, SDA)
Input High Voltage, VIH
Input Low Voltage, VIL
Hysteresis
0.4
V
IOUT = –6.0 mA; VCC = 3 V
0.1
1
µA
VOUT = VCC
2.1
V
0.8
V
500
mV
DIGITAL INPUT LOGIC LEVELS
(ADD, VID0–VID4, NTI)5
VID0–3 Input Resistance
VID4 Input Resistance
Input High Voltage, VIH6
Input Low Voltage, VIL6
100
k
ADM1025 Only
300
k
ADM1025 Only
100
k
ADM1025A
2.1
V
0.8
V
DIGITAL INPUT LEAKAGE CURRENT
Input High Current, IIH
Input Low Current, IIL
Input Capacitance, CIN
–1
1
5
µA
VIN = VCC
µA
VIN = 0
pF
SERIAL BUS TIMING
Clock Frequency, fSCLK
Glitch Immunity, tSW
Bus Free Time, tBUF
Start Setup Time, tSU:STA
Start Hold Time, tHD:STA
Stop Condition Setup Time tSU:STO
SCL Low Time, tLOW
SCL High Time, tHIGH
SCL, SDA Rise Time, tR
SCL, SDA Fall Time, tF
Data Setup Time, tSU:DAT
Data Hold Time, tHD:DAT
50
1.3
600
600
600
1.3
0.6
100
300
400
kHz
See Figure 1
ns
See Figure 1
µs
See Figure 1
ns
See Figure 1
ns
See Figure 1
ns
See Figure 1
µs
See Figure 1
µs
See Figure 1
300
ns
See Figure 1
300
ns
See Figure 1
ns
See Figure 1
ns
See Figure 1
NOTES
1All voltages are measured with respect to GND, unless otherwise specified.
2Typicals are at TA = 25°C and represent most likely parametric norm. Shutdown current typ is measured with VCC = 3.3 V.
3TUE (Total Unadjusted Error) includes Offset, Gain and Linearity errors of the ADC, multiplexer and on-chip input attenuators, including an external series input
protection resistor value between zero and 1 k.
4Total monitoring cycle time is nominally 114.4 ms. Monitoring Cycle consists of 6 Voltage + 1 Internal Temperature + 1 External Temperature readings.
5ADD is a three-state input that may be pulled high, low or left open-circuit.
6Timing specifications are tested at logic levels of VIL = 0.8 V for a falling edge and VIH = 2.2 V for a rising edge.
Specifications subject to change without notice.
–2–
REV. A

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