MCR8N View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
MCR8N Datasheet PDF : 5 Pages
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MCR8N
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half−wave, silicon gate−controlled devices are needed.
Features
• Blocking Voltage of 600 thru 800 Volts
• On−State Current Rating of 8 Amperes RMS at 80°C
• High Surge Current Capability − 80 Amperes
• Rugged, Economical TO−220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of IGT, VGT and IH Specified
for Ease of Design
• High Immunity to dv/dt − 100 V/msec Minimum at 125°C
• Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1) VDRM,
V
(TJ = −40 to 125°C, Sine Wave,
VRRM
50 to 60 Hz, Gate Open) MCR8M
600
MCR8N
800
On-State RMS Current
IT(RMS)
8.0
A
(180° Conduction Angles; TC = 80°C)
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, TC = 125°C)
Circuit Fusing Consideration (t = 8.33 ms)
ITSM
I2t
80
26.5
A
A2sec
Forward Peak Gate Power
(Pulse Width ≤ 1.0 ms, TC = 80°C)
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
PGM
5.0
W
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width ≤ 1.0 ms, TC = 80°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
−40 to 125 °C
Storage Temperature Range
Tstg −40 to 150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
December, 2005 − Rev. 5
http://onsemi.com
SCRs
8 AMPERES RMS
600 thru 800 VOLTS
G
A
K
MARKING
DIAGRAM
123
TO−220AB
CASE 221A−09
STYLE 3
AY WW
MCR8NG
AKA
A
Y
WW
G
AKA
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Diode Polarity
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
Device
Package
Shipping
MCR8N
TO−220AB
50 Units / Rail
MCR8NG
TO−220AB
(Pb−Free)
50 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR8/D
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