MG600Q2YS60A View Datasheet(PDF) - Mitsumi
Part Name
Description
Manufacturer
MG600Q2YS60A Datasheet PDF : 9 Pages
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Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector emitter voltage
Gate emitter voltage
Collector current
DC
Forward current
DC
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque
Terminal: M8
Mounting: M5
VCES
VGES
IC
IF
PC
Tj
Tstg
VIsol
―
―
1200
V
±20
V
600
A
600
A
4300
W
150
°C
40~125
°C
2500
(AC 1 min)
V
10
N·m
3
N·m
MG600Q2YS60A
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Collector cut off current
Gate emitter cut off voltage
Collector emitter saturation
voltage
Input capacitance
Gate emitter voltage
Gate resistance
Turn on delay time
Rise time
Switching
time
Turn on time
Turn off delay time
Fall time
Turn off time
Forward voltage
Reverse recovery time
Thermal resistance
RTC operating current
Symbol
Test Condition
IGES
ICES
VGE(off)
VCE(sat)
VGE = ±20V, VCE = 0V
VCE = 1200V, VGE = 0
IC = 600mA, VCE = 5V
IC = 600A
VGE = 15V
Cies
VGE
RG
VCE = 10V, VGE = 0V,
f = 1MHz
―
―
td(on)
tr
ton
td(off)
tf
toff
VF
Inductive load
VCC = 600V
IC = 600A
VGE = ±15V
RG = 7.5Ω
IF = 600A,
VGE = 0V
trr
IF = 600A, VGE = 15V
di / dt = 2000A / μs
Rth(j c)
Transistor stage
Diode stage
Irtc
Tj = 25°C
Min. Typ. Max. Unit
―
―
±10
μA
―
―
1
mA
6.0
6.7
8.0
V
Tj = 25°C
―
2.7
3.1
V
Tj = 125°C ―
3.2
3.5
― 41000 ―
pF
13
15
17
V
7.5
―
15
Ω
―
0.3
―
―
0.2
―
―
0.5
―
μs
―
1.3
―
―
0.1 0.3
(Note) ―
1.4
―
Tj = 25°C
―
2.2
3.2
V
Tj = 125°C ―
2.0
―
―
0.3 0.5
μs
―
― 0.029
°C / W
―
― 0.056
1200 ―
―
A
2004-10-01 3/9
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