MG800J1US52A View Datasheet(PDF) - MITSUBISHI ELECTRIC
Part Name
Description
Manufacturer
MG800J1US52A Datasheet PDF : 7 Pages
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MAXIMUM RATINGS (Ta = 25°C)
Symbol
VCES
VGES
VSES
IC
ICP
IF
IFM
PC
Tj
Tstg
Vlsol
—
—
Parameter
Collector-emitter voltage
Gate-emitter voltage
Sense-emitter voltage
Collector DC
current 1ms
Forward DC
current 1ms
Collector power dissipation
Junction temperature
Storage temperature range
Isolation voltage
Screw Terminal (M4/M6)
torque Mounting
TC = 25°C
MITSUBISHI IGBT MODULES
MG800J1US52A
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
Conditions
Ratings
600
±20
40
800
1600
800
1600
2500
150
–40 ~ 125
2500 (AC 1 minute)
2/3
3
Unit
V
V
V
A
A
W
°C
°C
V
N•m
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Symbol
Parameter
Test conditions
IGES
ICES
VGE(off)
VCE(sat)
Cies
td(on)
tr
ton
td(off)
tf
toff
VF
trr
ISES
IC(SEN-START)
VSEN
Rth(j-c)
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Turn-on delay time
Rise time
Switching Turn-on time
time
Turn-off delay time
Fall time
Turn-off time
Forward voltage
Reverse recovery time
Sense leakage current
Sense Sense start current
Sense voltage
Thermal resistance
VGE = ±20V, VCE = 0
VCE = 600V, VGE = 0
IC = 800mA, VCE = 5V
IC = 800A, Tj = 25°C
VCE = 10V, VGE = 0, f = 1MHz
Inductive load
VCC = 300V
IC = 800A
VGE = ±15V
RG = 2Ω
IF = 800A, VGE = 0
IF = 800A, VGE = –15V, di/dt = 1500A/µs
VSEN – E = 40V, VCE = 0, VGE = 0
VGE = 15V, VSE = 14.8V
VGE = 15V, IC = 3000A
Transistor stage
Diode stage
(Note 1)
(Note 1)
(Note 2)
(Note 2)
Min.
—
—
5.5
—
—
—
—
—
—
—
—
—
—
—
1300
—
—
—
Limits
Typ.
—
—
7.0
2.1
93000
0.3
0.25
0.55
0.62
0.15
0.77
2.3
0.08
—
—
—
—
—
Max.
±500
4.0
8.0
2.7
—
—
—
—
—
0.3
—
3.0
0.15
200
—
10
0.05
0.1
Unit
nA
mA
V
V
pF
µs
V
µs
nA
A
V
°C/W
Dec.2005
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