MG800J1US52A View Datasheet(PDF) - MITSUBISHI ELECTRIC
Part Name
Description
Manufacturer
MG800J1US52A Datasheet PDF : 7 Pages
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Edsw - RG
101
7
5
3
2
100
7 Common emitter
5 VCC = 300V
3 IC = 800A
2
VGE = ±15V
Tj = 25°C
Tj = 125°C
10-1
0
5
10
15
20
GATE RESISTANCE RG (Ω)
VCE, VGE - QG
500
20
400
16
VCE =0V
300
300
12
100
200
200
8
100
0
0
Common emitter 4
RL = 0.375Ω
Tj = 25°C
0
1000 2000 3000 4000 5000 6000
CHARGE QG (nC)
Rth - tW
100
7 TC = 25°C
5
3
2
10-1
7
5
3
2
10-2
7
5
3
2
DIODE STAGE
TRANSISTOR STAGE
10-3
10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101
PULSE WIDTH tW (s)
MITSUBISHI IGBT MODULES
MG800J1US52A
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
Edsw - IF
101
7
5
3
2
100
7
5
3
2
10-1
0
Common emitter
VCC = 300V
RG = 2Ω
VGE = ±15V
Tj = 25°C
Tj = 125°C
200
400
600
800
FORWARD CURRENT IF (A)
C - VCE
106
7
5
3
2
105
7
5
3
2
104
7
5
3
2
103
7
5
VGE = 0V
3 f = 1MHz
2 TC = 25°C
102
100 2 3 5 7 101
23
Cies
Coes
Cres
5 7 102
COLLECTOR-EMITTER VOLTAGE VCE (V)
Dec.2005
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