MG800J2YS50A View Datasheet(PDF) - MITSUBISHI ELECTRIC
Part Name
Description
Manufacturer
MG800J2YS50A Datasheet PDF : 9 Pages
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1000000
C – VCE
100000
Ciss
10000
1000
Common emitter
VGE = 0
f = 1 MHz
Tj = 25°C
100
0
1
10
Coss
Crss
100
1000
Collector-emitter voltage VCE (V)
10000
Reverse bias SOA
1000
100
10
Tj <= 125°C
VGE = ±15 V
RG = 4.7 Ω
1
0
200
400
600
800
Collector-emitter voltage VCE (V)
MG800J2YS50A
1
Tc = 25°C
0.1
0.01
Rth (t) – tw
Diode stage
Transistor stage
0.001
0.001
0.01
0.1
1
10
Pulse width tw (s)
10000
Scsoa
1000
100
10
Common emitter
VCC = 300 V
Tj <= 125°C
1 tw = 10 µs
0
200
400
600
800
Collector-emitter voltage VCE (V)
2004-10-01 8/9
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