MJE2955T View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

MJE2955T

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

MJE2955T

DESCRIPTION

·With TO-220 package

·Complement to type MJE3055T

·DC current gain -hFE = 20–70 @ IC = -4 Adc

·Collector–emitter saturation voltage -

VCE(sat) = -1.1 Vdc (Max) @ IC =- 4 Adc

APPLICATIONS

·Designed for general–purpose

switching and amplifier applications.

PINNING

PIN

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Fig.1 simplified outline (TO-220) and symbol

ABSOLUTE MAXIMUM RATINGS(TC=25 )

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

Junction temperature

Storage temperature

Open emitter

Open base

Open collector

TC=25

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c

Thermal resistance junction to case

VALUE

-70

-60

-5

-10

-6

75

150

-55~150

UNIT

V

V

V

A

A

W

VALUE

1.67

UNIT

/W

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