2N4124(1997) View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
2N4124 Datasheet PDF : 2 Pages
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NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC = 1.0 mA, IB = 0
IC = 10 µA, IE = 0
IC = 10 µA, IC = 0
VCB = 20 V, IE = 0
VEB = 3.0 V, IC = 0
25
V
30
V
5.0
V
50
nA
50
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 2.0 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 50 mA, IB = 5.0 mA
IC = 50 mA, IB = 5.0 mA
120
360
60
0.3
V
0.95
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
300
f = 100 MHz
MHz
Cobo
Output Capacitance
VCB = 5.0 V, IE = 0,
f = 100 kHz
4.0
pF
Cibo
Input Capacitance
VBE = 0.5 V, IC = 0,
f = 1.0 kHz
8.0
pF
Ccb
Collector-Base Capcitance
VCB = 5.0 V, IE = 0,
f = 100 kHz
4.0
pF
hfe
Small-Signal Current Gain
VCE = 10 V, IC = 2.0 mA,
f = 1.0 kHz
120
480
NF
Noise Figure
IC = 100 µA, VCE = 5.0 V,
RS =1.0kΩ, f=10 Hz to 15.7 kHz
5.0
dB
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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