MMBT5401 View Datasheet(PDF) - Galaxy Semi-Conductor
Part Name
Description
Manufacturer
MMBT5401 Datasheet PDF : 4 Pages
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Production specification
PNP General Purpose Transistor
FEATURES
Epitaxial planar die construction.
Complementary NPN type available
(MMBT5551).
Also available in lead free version.
Pb
Lead-free
MMBT5401
APPLICATIONS
Ideal for medium power amplification and switching
ORDERING INFORMATION
Type No.
Marking
MMBT5401
2L
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter
Value
VCBO
collector-base voltage
-160
VCEO
collector-emitter voltage
-150
VEBO
emitter-base voltage
-5
IC
collector current (DC)
-0.6
PD
Total device dissipation
0.35
RθJC
Thermal resistance,junction to ambient
357
Tj ,Tstg
junction and storage temperature
-55 to +150
UNIT
V
V
V
A
W
°C/W
°C
C075
Rev.A
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