MMBTH10LT1 View Datasheet(PDF) - Motorola => Freescale
Part Name
Description
Manufacturer
MMBTH10LT1 Datasheet PDF : 6 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTH10LT1/D
VHF/UHF Transistor
NPN Silicon
COLLECTOR
3
1
BASE
2
EMITTER
MMBTH10LT1
Motorola Preferred Device
3
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
DEVICE MARKING
VCEO
25
Vdc
VCBO
30
Vdc
VEBO
3.0
Vdc
MMBTH10LT1 = 3EM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
RθJA
PD
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
RθJA
TJ, Tstg
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0)
Collector Cutoff Current (VCB = 25 Vdc, IE = 0)
Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
V(BR)CEO
25
V(BR)CBO
30
V(BR)EBO
3.0
ICBO
—
IEBO
—
CASE 318-08, STYLE 6
SOT-23 (TO-236AB)
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
100
nAdc
—
100
nAdc
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa, SInmc. 1a9ll9–7Signal Transistors, FETs and Diodes Device Data
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