MMFT2406T1G View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

MMFT2406T1G

Power MOSFET 700 mA, 240 V, N−Channel, SOT−223

ON Semiconductor 

MMFT2406T1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristics

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0, ID = 100 mA)

Zero Gate Voltage Drain Current

(VDS = 120 V, VGS = 0)

Gate−Body Leakage Current

(VGS = 15 Vdc, VDS = 0)

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

(VDS = VGS, ID = 1.0 mAdc)

Static Drain−to−Source On−Resistance

(VGS = 2.5 Vdc, ID = 0.1 Adc)

(VGS = 10 Vdc, ID = 0.5 Adc)

Drain−to−Source On−Voltage

(VGS = 10 V, ID = 0.5 A)

Forward Transconductance

(VDS = 6.0 V, ID = 0.5 A)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 25 V, VGS = 0,

f = 1.0 MHz)

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

Symbol

Min

Max

Unit

V(BR)DSS

240

−

Vdc

IDSS

−

10

mAdc

IGSS

−

100

nAdc

VGS(th)

0.8

2.0

Vdc

RDS(on)

W

−

10

−

6.0

VDS(on)

−

3.0

Vdc

gFS

300

−

mmhos

Ciss

Coss

Crss

−

125

pF

−

50

−

20

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