MPSH10 View Datasheet(PDF) - DC COMPONENTS
Part Name
Description
Manufacturer
MPSH10 Datasheet PDF : 1 Pages
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DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
MPSH10
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in VHF & UHF oscillators and VHF
mixer in tuner of a TV receiver.
TO-92
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
20
V
15
V
3
V
50
mA
625
mW
+150
oC
-55 to +150 oC
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) Min
(1.0.2570)Typ
.022(0.56)
.014(0.36)
.100 Typ
(2.54)
2o Typ
2o Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO 20
-
Collector-Emitter Breakdown Voltage BVCEO 15
-
Emitter-Base Breakdown Volatge
BVEBO
3
-
Collector Cutoff Current
ICBO
-
-
Emitter Cutoff Current
IEBO
-
-
Collector-Emitter Saturation Voltage(1) VCE(sat)
-
-
Base-Emitter On Voltage
DC Current Gain(1)
VBE(on)
-
-
hFE
60
-
Transition Frequency
fT
650
-
Output Capacitance
Cob
-
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max
-
-
-
0.1
0.1
0.5
0.95
-
-
0.7
Unit
V
V
V
µA
µA
V
V
-
MHz
pF
Test Conditions
IC=100µA
IC=1mA
IE=10µA
VCB=20V
VEB=2V
IC=4mA, IB=0.4mA
IC=4mA, VCE=10V
IC=4mA, VCE=10V
IC=4mA, VCB=10V, f=100MHz
VCB=10V, f=1MHz
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