MPSW06 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
MPSW06 Datasheet PDF : 2 Pages
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MPSW06
Discrete POWER & Signal
Technologies
C
BE
TO-226
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 33. See
MPSA06 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
80
VCBO
Collector-Base Voltage
80
VEBO
Emitter-Base Voltage
4.0
IC
Collector Current - Continuous
500
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
MPSW06
1.0
8.0
125
50
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
Units
V
V
V
mA
°C
Units
W
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
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