MX29F8100 View Datasheet(PDF) - Macronix International

Part Name

Description

Manufacturer

MX29F8100

8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY

Macronix International 

INDEX

MX29F8100

ERASE AND PROGRAMMING PERFORMANCE(Note 2)

PARAMETER

MIN.

LIMITS

TYP.

MAX. (Note 1)

Chip/Sector Erase Time

150

(Note 2)

UNITS

ms

Page Programming Time

3

(Note 3)

ms

Chip Programming Time

24

75

sec

Erase/Program Cycles

10,000

Cycles

Byte Program Time

24

us

*Note 1: MAX values are all evaluated with polling the status in stead of internal state machine time out.

*Note 2: The IC internal state machine is set 2000 ms as maximum chip/sector erase time out.

*Note 3: We set 60 ms as production test condition, whereas, the IC internal state machine is set 150 ms as maximum programming

time out.

LATCHUP CHARACTERISTICS

Input Voltage with respect to GND on all pins except I/O pins

Input Voltage with respect to GND on all I/O pins

Current

Includes all pins except Vcc. Test conditions: Vcc = 5.0V, one pin at a time.

MIN.

-1.0V

-1.0V

-100mA

MAX.

13.5V

Vcc + 1.0V

+100mA

P/N: PM0262

REV. 2.0, JAN. 22, 1999

34

Share Link: