NID5001N View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
NID5001N Datasheet PDF : 5 Pages
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NID5001N
Self−Protected FET
with Temperature and
Current Limit
HDPlus devices are an advanced series of power MOSFETs which
utilize ON Semicondutor’s latest MOSFET technology process to
achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.
Features
• Low RDS(on)
• Current Limitation
• Thermal Shutdown with Automatic Restart
• Short Circuit Protection
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Slew Rate Control for Low Noise Switching
• Overvoltage Clamped Protection
• Pb−Free Package is Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage Internally Clamped
VDSS
42
Vdc
Drain−to−Gate Voltage Internally Clamped
(RGS = 1.0 MW)
VDGR
42
Vdc
Gate−to−Source Voltage
VGS
"14
Vdc
Drain Current − Continuous
ID
Internally Limited
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
Thermal Resistance, Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
PD
RqJC
RqJA
RqJA
W
64
1.0
1.56
1.95 °C/W
120
80
Single Pulse Drain−to−Source Avalanche
Energy
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL = 4.5 Apk, L = 120 mH, RG = 25 W)
EAS
1215
mJ
Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR4 PCB, steady state.
2. Mounted onto a 2″ square FR4 board
(1″ square, 2 oz. Cu 0.06″ thick single−sided, t = steady state).
http://onsemi.com
VDSS
(Clamped)
42 V
RDS(ON) TYP
23 mW @ 10 V
ID MAX
(Limited)
33 A*
*Max current may be limited below this value
depending on input conditions.
Drain
Gate
Input
Overvoltage
Protection
RG
MPWR
ESD Protection
Temperature Current Current
Limit
Limit Sense
Source
MARKING
DIAGRAM
DPAK
CASE 369C
STYLE 2
Y
= Year
WW = Work Week
D5001N = Device Code
G
= Pb−Free Package
1
YWW
2
D50
01NG
3
1 = Gate
2 = Drain
3 = Source
ORDERING INFORMATION
Device
Package
Shipping†
NID5001NT4
DPAK 2500/Tape & Reel
NID5001NT4G
DPAK 2500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
April, 2006 − Rev. 8
Publication Order Number:
NID5001N/D
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