NP1800SDMCT3G View Datasheet(PDF) - ON Semiconductor
Part Name
Description
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NP1800SDMCT3G Datasheet PDF : 6 Pages
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NP−SDMC Series
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Rating
Value
Unit
VDRM
Repetitive peak off−state voltage: Rated maximum
(peak) continuous voltage that may be applied in the
off−state conditions including all dc and repetitive
alternating voltage components.
NP0720SDMCT3G
NP1300SDMCT3G
NP1500SDMCT3G
$65
V
$120
$140
NP1800SDMCT3G
$170
NP3100SDMCT3G
$275
IPPS
Nonrepetitive peak pulse current: Rated maximum 2x10 ms, GR−1089−CORE
1000
A
value of peak impulse pulse current that may be
applied.
10x1000 ms, GR−1089−CORE
200
ITSM
Non−repetitive peak on−state current: Rated
0.0167s, 50/60 Hz, full sine wave
60
A
maximum (peak) value of ac power frequency
on−state surge current which may be applied for a 0.1s, 50/60 Hz, full sine wave
30
specified time or number of ac cycles.
1000s, 50/60 Hz, full sine wave
2.2
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS TABLE (TA = 25°C unless otherwise noted)
Symbol
Rating
Min Typ Max Unit
V(BO)
Breakover voltage: The maximum voltage across the device in or at the
breakdown region.
VDC = 1000 V, dv/dt = 100 V/ms
NP0720SDMCT3G
NP1300SDMCT3G
NP1500SDMCT3G
$88 V
$160
$180
NP1800SDMCT3G
$220
NP3100SDMCT3G
$350
I(BO)
IH
IDRM
VT
dv/dt
di/dt
Breakover Current: The instantaneous current flowing at the breakover voltage.
Holding Current: The minimum current required to maintain the device in the on−state.
150
Off−state Current: The dc value of current that results from the applica- VD = 50 V
tion of the off−state voltage
VD = VDRM
On−state Voltage: The voltage across the device in the on−state condition.
IT = 2.2 A (pk), PW = 300 ms, DC = 2%
Critical rate of rise of off−state voltage: The maximum rate of rise of voltage (below VDRM) that ±5
will not cause switching from the off−state to the on−state.
Linear Ramp between 0.1 VDRM and 0.9 VDRM
Critical rate of rise of on−state current: rated value of the rate of rise of current which the device
can withstand without damage.
800 mA
mA
2
mA
5
4
V
kV/ms
±500 A/ms
CO Off−state Capacitance
f = 1.0 MHz, Vd = 1.0 VRMS, VD = −2 Vdc
65
pF
THERMAL CHARACTERISTICS
Symbol
Rating
TSTG
TJ
R0JA
Storage Temperature Range
Operating Temperature Range
Thermal Resistance: Junction−to−Ambient Per EIA/JESD51−3, PCB = FR4 3”x4.5”x0.06”
Fan out in a 3x3 inch pattern, 2 oz copper track.
Value
−65 to +150
−40 to +150
90
Unit
°C
°C
°C/W
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