PEMH10(2001) View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PEMH10 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per transistor
VCBO
VCEO
VEBO
Vi
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
IO
ICM
Ptot
Tstg
Tj
Tamb
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Per device
Ptot
total power dissipation
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to
ambient
CONDITIONS
notes 1 and 2
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
Preliminary specification
PEMH10
MIN.
MAX.
UNIT
−
50
V
−
50
V
−
10
V
−
+12
V
−
−5
V
−
100
mA
−
100
mA
−
200
mW
−65
+150
°C
−
150
°C
−65
+150
°C
−
300
mW
VALUE
416
UNIT
K/W
2001 Oct 22
3
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