PMD1601K View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

PMD1601K

Silicon NPN Darlingtion Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlingtion Power Transistor

PMD1601K

DESCRIPTION

·High DC current gain

·Collector-Emitter Breakdown Voltage-

V(BR)CEO= 60V(Min)

·Complement to type PMD1701K

APPLICATIONS

·Designed for general purpose amplifier and low frequency

switching applications

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

60

V

VCEO Collector-Emitter Voltage

60

V

VEBO Emitter-Base Voltage

5.0

V

IC

Collector Current -Continuous

20

A

ICP

Collector Current-Peak

40

A

IBB

Base Current

0.5

A

PC

Collector Power Dissipation@TC=25℃

180

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c ThermalResistance, Junction to Case

MAX UNIT

0.97 ℃/W

isc Website：www.iscsemi.cn

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