PSMN030-60YS View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

Manufacturer

PSMN030-60YS

N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET

NXP Semiconductors. 

PSMN030-60YS

N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET

Rev. 01 — 11 February 2010

Objective data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

„ Advanced TrenchMOS provides low

RDSon and low gate charge

„ High efficiency gains in switching

power converters

„ Improved mechanical and thermal

characteristics

„ LFPAK provides maximum power

density in a Power SO8 package

1.3 Applications

„ DC-to-DC converters

„ Lithium-ion battery protection

„ Load switching

„ Motor control

„ Server power supplies

1.4 Quick reference data

Table 1. Quick reference

Symbol Parameter

Conditions

VDS

drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C

ID

drain current

Tmb = 25 °C; VGS = 10 V;

see Figure 1

Ptot

total power dissipation

Tj

junction temperature

Dynamic characteristics

Tmb = 25 °C; see Figure 2

QGD

QG(tot)

gate-drain charge

total gate charge

VGS = 10 V; ID = 15 A;

VDS = 30 V; see Figure 14

and 15

Static characteristics

RDSon

drain-source on-state

resistance

VGS = 10 V; ID = 15 A;

Tj = 100 °C; see Figure 12

VGS = 10 V; ID = 15 A;

Tj = 25 °C; see Figure 13

Min Typ Max Unit

-

-

60 V

-

-

29 A

-

-

-55 -

56 W

175 °C

-

3

-

nC

-

13 -

nC

-

-

39.5 mΩ

-

19.1 24.7 mΩ

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