PSMN030-60YS View Datasheet(PDF) - NXP Semiconductors.
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PSMN030-60YS Datasheet PDF : 13 Pages
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NXP Semiconductors
PSMN030-60YS
N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET
Table 6. Characteristics …continued
Symbol Parameter
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
IS = 15 A; VGS = 0 V; Tj = 25 °C
IS = 5 A; dIS/dt = -100 A/µs;
VGS = 0 V; VDS = 30 V
30
gfs
(S)
20
003aae120
30
ID
(A)
20
Min Typ Max Unit
-
0.87 1.2 V
-
25
-
ns
-
23
-
nC
003aae119
10
10
Tj = 175 °C
Tj = 25 °C
0
0
10
20
30
ID (A)
0
0
2
4
6
VGS (V)
Fig 5. Forward transconductance as a function of
drain current; typical values
1500
C
(pF)
1000
003aae121
Ciss
Crss
500
0
0
5
10
15
20
VGS (V)
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
50
ID
(A)
40
30
10 8
003aae118
7 6.5
6
5.5
20
5
10
4.5
VGS(V) = 4
0
0
0.5
1
1.5
2
VDS(V)
Fig 7. Input and reverse transfer capacitances as a
Fig 8. Output characteristics: drain current as a
function of gate-source voltage; typical values
function of drain-source voltage; typical values
PSMN030-60YS_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 11 February 2010
© NXP B.V. 2010. All rights reserved.
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