PEMD2(2008) View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PEMD2 Datasheet PDF : 16 Pages
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NXP Semiconductors
PEMD2; PIMD2; PUMD2
NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
4. Marking
Table 5. Marking codes
Type number
PEMD2
PIMD2
PUMD2
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
D4
M5
D*2
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage open emitter
-
VCEO
collector-emitter voltage open base
-
VEBO
emitter-base voltage
open collector
-
VI
input voltage TR1
positive
-
negative
-
input voltage TR2
positive
-
negative
-
IO
output current
-
ICM
peak collector current
single pulse;
-
tp ≤ 1 ms
Ptot
total power dissipation Tamb ≤ 25 °C
[1]
PEMD2 (SOT666)
[2] -
PIMD2 (SOT457)
-
PUMD2 (SOT363)
-
Tj
junction temperature
-
Tamb
ambient temperature
−65
Tstg
storage temperature
−65
Max Unit
50
V
50
V
10
V
+40
V
−10
V
+10
V
−40
V
100
mA
100
mA
200
mW
300
mW
200
mW
150
°C
+150 °C
+150 °C
PEMD2_PIMD2_PUMD2_7
Product data sheet
Rev. 07 — 24 September 2008
© NXP B.V. 2008. All rights reserved.
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