PUMT1(2012) View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
PUMT1 Datasheet PDF : 3 Pages
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PUMT1
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current (DC)
IC
-100
mA
Peak Collector Current
ICM
-200
mA
Peak Base Current
IBM
-200
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
SYMBOL
CONDITION
MIN TYP MAX UNIT
Collector Cut-Off Current
ICBO
IE=0, VCB=-30V
IE=0, VCB=-30V, TJ=150°C
-100 nA
-10 μA
Emitter Cut-Off Current
IEBO
VEB=-4V, IC=0
-100 nA
DC Current Gain
hFE
IC=-1mA, VCE=-6V
120
Collector-Emitter Saturation Voltage VCE(SAT) IC=-50mA, IB=-5mA (Note 1)
-200 mV
Collector Capacitance
Cc
IE=IE=0, VCB=-12V, f=1MHz
2.2 pF
Transition Frequency
fT
IC=-2mA, VCE=-12V, f=100MHz 100
MHz
Note: 1. Pulse test: Pulse Width≤300μs, Duty Cycle≤2.0%
2. The following characteristics apply to both TR1 and TR2.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R218-001.E
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