UTCPUMT1(Old_V) View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
UTCPUMT1 Datasheet PDF : 2 Pages
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UTCPUMT1 PNP EPITAXIAL SILICON TRANSISTOR
The following characteristics apply to both Tr1 and Tr2
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current (DC)
Ic
Peak collector current
ICM
Peak base current
IBM
Collector Power Dissipation (total)
Pc
Junction temperature
Tj
Storage temperature
Tstg
RATING
-50
-40
-5
-100
-200
-200
300
150
-65~+150
UNIT
V
V
V
mA
mA
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
SYMBOL
CONDITION
Collector cut-off current
ICBO
IE=0, VcB=-30V
IE=0, VcB=-30V, Tj=150℃
Emitter cut-off current
IEBO
VEB=-4V, Ic=0
DC current gain
hFE
Ic=-1mA, VCE=-6V
Collector-emitter saturation voltage
VCE(sat) Ic=-50mA, IB=-5mA (note 1)
Collector capacitance
Cc
IE=ie=0, VCB=-12V, f=1MHz
Transition frequency
fT
Ic=-2mA, VCE=-12V, f=100MHz
Note:1. Pulse test: tp≤300µs, δ≤0.02
MIN MAX
-100
-10
-100
120
-200
2.2
100
UNIT
nA
μA
nA
mV
pF
MHz
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R218-001,A
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