PZT4401 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PZT4401 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN switching transistor
Product specification
PZT4401
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
109
K/W
28
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
IE = 0; VCB = 60 V
−
IC = 0; VEB = 6 V
−
VCE = 1 V; see Fig.2
IC = 0.1 mA
20
IC = 1 mA
40
IC = 10 mA
80
IC = 150 mA; note 1
100
VCE = 2 V; IC = 500 mA; note 1
40
IC = 150 mA; IB = 15 mA; note 1
−
IC = 500 mA; IB = 50 mA; note 1
−
IC = 150 mA; IB = 15 mA; note 1
−
IC = 500 mA; IB = 50 mA; note 1
−
IE = ie = 0; VCB = 5 V; f = 1 MHz
−
IC = ic = 0; VEB = 500 mV; f = 1 MHz −
IC = 20 mA; VCE = 10 V; f = 100 MHz 250
Switching times (between 10% and 90% levels); see Fig.3
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = 150 mA; IBon = 15 mA;
−
IBoff = −15 mA; VBB = −3.5 V;
−
VCC = 29.5 V
−
−
−
−
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MAX.
50
50
−
−
−
300
−
400
750
950
1 200
8
30
−
35
15
20
250
200
60
UNIT
nA
nA
mV
mV
mV
mV
pF
pF
MHz
ns
ns
ns
ns
ns
ns
1999 May 10
3
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