QRB1114 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
QRB1114 Datasheet PDF : 4 Pages
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PHOTOTRANSISTOR
REFLECTIVE OBJECT SENSOR
QRB1113 QRB1114
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(2,3,4)
Soldering Temperature (Flow)(2,3)
EMITTER
TOPR
TSTG
TSOL-I
TSOL-F
-40 to +85
-40 to +85
240 for 5 sec
260 for 10 sec
Continuous Forward Current
Reverse Voltage
Power Dissipation(1)
SENSOR
IF
50
VR
5
PD
100
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
VCEO
30
VECO
4.5
20
Power Dissipation(1)
PD
100
NOTES
1. Derate power dissipation linearly 1.67 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
5. D is the distance from the assembly face to the reflective surface.
6. Measured using an Eastman Kodak neutral test card with 90% diffused reflecting surface.
7. Cross talk is the photo current measured with current to the input diode and no reflecting surface.
ELECTRICAL/OPTICAL CHARACTERISTICS (TA = 25°C)
Parameter
Test Conditions
Symbol
EMITTER
Forward Voltage
Reverse Current
Peak Emission Wavelength
SENSOR
IF = 40 mA
VF
VR = 5.0 V
IR
IF = 20 mA
λPE
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
COUPLED
IC = 1 mA
IE = 0.1 mA
VCE = 10 V, IF = 0 mA
BVCEO
BVECO
ICEO
On-state Collector Current
QRB1113
QRB1114
IF = 40 mA, VCE = 5 V
D = .150"(5,6)
IC(ON)
Collector-Emitter
Saturation Voltage
IF = 20 mA, IC = 0.5 mA
VCE (SAT)
Rise Time
Fall Time
Cross Talk
VCE = 5 V, RL = 100 V
tr
IC(ON) = 5 mA
tf
IF = 40 mA, VCE = 5 V(7)
ICX
Min.
—
—
—
30
5
—
0.20
0.60
—
—
—
—
Typ.
—
—
940
—
—
—
—
—
—
8
8
—
Units
°C
°C
°C
°C
mA
V
mW
V
V
mA
mW
Max. Units
1.7
V
100
µA
—
nm
—
V
—
V
100
nA
—
mA
0.4
V
—
µs
—
1.00
µA
© 2002 Fairchild Semiconductor Corporation
Page 2 of 4
3/5/02 DS300350
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