R8008ANX View Datasheet(PDF) - ROHM Semiconductor

Part Name

Description

Manufacturer

R8008ANX

Nch 800V 8A Power MOSFET

ROHM Semiconductor 

R8008ANX

　 　 　 　　 　

　 　 　 　 　 　 　 　 Datasheet

lAbsolute maximum ratings

Parameter

Symbol

Conditions

Values Unit

Drain - Source voltage slope

VDS = 640V, ID = 8A

dv/dt

Tj = 125℃

50 V/ns

lThermal resistance

Parameter

　

Symbol

for 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　

Values

Unit

Min. Typ. Max.

Thermal resistance, junction - case

Thermal resistance, junction - ambient

d Soldering temperature, wavesoldering for 10s

RthJC

RthJA

Tsold

-

- 1.87

-

- 70

-

- 265

endens lElectrical characteristics (Ta = 25°C)

m ig Parameter

Symbol

Conditions

s Drain - Source breakdown

m voltage

o e Drain - Source avalanche

D breakdown voltage

ec w Zero gate voltage

drain current

R e Gate - Source leakage current

t N Gate threshold voltage

No Static drain - source

on - state resistance

V(BR)DSS VGS = 0V, ID = 1mA

V(BR)DS VGS = 0V, ID = 4A

VDS = 800V, VGS = 0V

IDSS Tj = 25°C

Tj = 125°C

IGSS VGS = ±30V, VDS = 0V

VGS(th) VDS = 10V, ID = 1mA

VGS = 10V, ID = 4.0A

RDS(on)*6 Tj = 25°C

Values

Min. Typ. Max.

800 -

-

- 900 -

　

　

　

- 0.1 100

-

- 1000

-

- ±100

3

-

5

　

　

　

- 0.79 1.03

℃/W

℃/W

℃

Unit

V

V

μA

nA

V

Ω

Tj = 125°C

- 1.54 -

Gate resistance

RG f = 1MHz, open drain

- 6.6 - Ω

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　

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