RMB2S - RMB6S
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
1
Fig.2 Typical Junction Capacitance
30
25
0.8
Aluminum Substrate
20
0.6
15
0.4
10
Glass Epoxy P.C.B.
0.2
5
f=1.0MHz
Vsig=50mVp-p
0
0
0 20 40 60 80 100 120 140 160
0.1
1
10
100
AMBIENT TEMPERATURE (oC)
REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics
100
10
TJ=125°C
Fig.4 Typical Forward Characteristics
10
1
1
0.1
TJ=25°C
0.01
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
FORWARD VOLTAGE (V)
3
Version: H1810