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SE1030W View Datasheet(PDF) - SiGe Semiconductor, Inc.

Part Name
Description
Manufacturer
SE1030W
SIGE
SiGe Semiconductor, Inc. SIGE
SE1030W Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
SE1030W
LightCharger2.5 Gb/s Transimpedance Amplifier
Final
Applications Information
Note that all VCC pads (1, 8, 11) are connected on-chip, as are the VEE1 pads (5, 6, 7), and only one pad of each
type is required to be bonded out. However, in order to minimize inductance for optimum high speed performance, it
is recommended that all power pads are wire bonded. The VEE2 pad is not connected on chip to VEE1 and must be
bonded out separately.
+3.3 V
1 nF min
PIN
PIN Bias
1 8 11
VCC
3 TZ_IN
TZ Amplifier
SE1030W
10
OUTP
OUTN 9
VEE2
4
VEE1
5 67
1 nF min
To 50 O loads,
AC coupled
0V
43-DST-01 § Rev 1.5 § May 24/02
8 of 9

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