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SM6T(2002) View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
Manufacturer
SM6T
(Rev.:2002)
Vishay
Vishay Semiconductors Vishay
SM6T Datasheet PDF : 3 Pages
1 2 3
SM6T Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Surface Mount TRANSZORB®
Transient Voltage Suppressors
DO-214AA (SMBJ)
Cathode Band
Breakdown Voltage 6.8 to 220V
Peak Pulse Power 600W
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
Mounting Pad Layout
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.083 MIN
(2.10 MIN)
0.106 MAX
(2.69 MAX)
0.096 (2.44)
0.084 (2.13)
Dimensions in inches
and (millimeters)
0.050 MIN
(1.27 MIN)
0.220 REF
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
Mechanical Data
0.008
(0.203)
Max.
Features
Case: JEDEC DO-214AA (SMB) molded plastic over
passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: For uni-directional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
Standard Packaging: 12mm tape (EIA STD RS-481)
Weight: 0.003 ounces, 0.093 grams
Packaging Codes – Options (Antistatic):
51 2K per Bulk box, 20K/carton
52 750 per 7plastic Reel (12mm tape), 15K/carton
5B 3.2K per 13plastic Reel (12mm tape), 32K/carton
Low profile package with built-in strain relief for
surface mounted applications
Glass passivated junction
Low inductance
Excellent clamping capability
Repetition rate (duty cycle): 0.01%
Fast response time: theoretically (with no parisitic
inductance) less than 1ps from 0 Volts to V(BR) for
unidirectional and 5ns for bidirectional types
High temperature soldering: 250°C/10 seconds at
terminals
Plastic package has Underwriters Laboratory
Flammability Classificaion 94V-0
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak pulse power dissipation on
10/1000µs waveform(1)(2) (Fig. 1)
PPPM
Peak pulse current with a 10/1000µs waveform(1)
IPPM
Power dissipation on infinite heatsink, TA = 50°C
PM(AV)
Peak forward surge current 10ms single half sine-wave
uni-directional only(2)
IFSM
Thermal resistance junction to ambient air(3)
RθJA
Thermal resistance junction to leads
RθJL
Operating junction and storage temperature range
TJ, TSTG
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
Minimum 600
See Next Table
5.0
100
100
20
–65 to +150
W
A
W
A
°C/W
°C/W
°C
Document Number 88385
03-May-02
www.vishay.com
1

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