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SM6T27A View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
Manufacturer
SM6T27A Datasheet PDF : 5 Pages
1 2 3 4 5
www.vishay.com
SM6T Series
Vishay General Semiconductor
Surface Mount TRANSZORB®
Transient Voltage Suppressors
DO-214AA (SMB J-Bend)
PRIMARY CHARACTERISTICS
VBR
VWM
PPPM
PD
IFSM (uni-directional only)
TJ max.
Polarity
6.8 V to 220 V
5.8 V to 188 V
600 W
5.0 W
100 A
150 °C
Uni-directional, bi-directional
Package
DO-214AA (SMB J-Bend)
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SM6T12CA).
Electrical characteristics apply in both directions.
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamping capability
• Low inductance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLCIATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB J-Bend)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) (1)(2)
Peak power pulse current with a 10/1000 μs waveform (fig. 3) (1)
Power dissipation on infinite heatsink TA = 50 °C
Peak forward surge current 10 ms single half sine-wave uni-directional only (2)
Operating junction and storage temperature range
PPPM
IPPM
PD
IFSM
TJ, TSTG
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
VALUE
600
See next table
5.0
100
-65 to +150
UNIT
W
A
W
A
°C
Revision: 09-Feb-15
1
Document Number: 89425
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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