SPU28N05L View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

SPU28N05L

SIPMOS ® Power Transistor

Siemens AG 

SPD28N05L

SPU28N05L

Drain-source on-resistance

RDS (on) = ƒ(Tj)

parameter: ID = 20 A, VGS = 4.5 V

0.16

Ω

RDS (on)

0.12

0.10

0.08

98%

0.06

typ

0.04

0.02

0.00

-60

-20

20

60 100 °C 180

Tj

Typ. capacitances

C = f (VDS)

parameter:VGS = 0V, f = 1MHz

10 4

Gate threshold voltage

VGS(th)= f (Tj)

parameter:VGS=VDS,ID = 50µA

3.0

V

2.6

VGS(th) 2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

max

0.8

0.6

typ

0.4

0.2

0.0

min

-60 -20 20 60 100 140 V 200

Tj

Forward characteristics of reverse diode

IF = ƒ(VSD)

parameter: Tj, tp = 80 µs

10 3

C

pF

A

I

F

10 2

10 3

Ciss

C

oss

10 2

0

Crss

5 10 15 20 25 30 V 40

VDS

Semiconductor Group

7

10 1

Tj = 25 °C typ

Tj = 175 °C typ

Tj = 25 °C (98%)

Tj = 175 °C (98%)

10 0

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0

VSD

30/Jan/1998

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