SPU28N05L View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

SPU28N05L

SIPMOS ® Power Transistor

Siemens AG 

SPD28N05L

SPU28N05L

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj)

Typ. gate charge

VGS = ƒ(QGate)

parameter: ID puls = 28 A

16

V

VGS

12

10

8

0,2 VDS max

6

0,8 VDS max

4

2

0

0 5 10 15 20 25 30 35 40 nC 50

QGate

65

V

V

(BR)DSS

61

59

57

55

53

51

49

-60

-20

20

60 100 °C 180

Tj

Semiconductor Group

8

30/Jan/1998

Share Link: