SPD31N05
SPU31N05
Avalanche energy EAS = Æ’(Tj)
parameter: ID = 31 A, VDD = 25 V
RGS = 25 Ω, L = 291 µH
150
mJ
130
EAS 120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 °C 180
Tj
Drain-source breakdown voltage
V(BR)DSS = Æ’(Tj)
Typ. gate charge
VGS = Æ’(QGate)
parameter: ID puls = 31 A
16
V
VGS
12
10
0,2 VDS max
0,8 VDS max
8
6
4
2
0
0 4 8 12 16 20 24 28 32 nC 38
QGate
65
V
V
(BR)DSS
61
59
57
55
53
51
49
-60
-20
20
60 100 °C 180
Tj
Semiconductor Group
8
30/Jan/1998