Philips Semiconductors
GSM 4 W power amplifier
Preliminary specification
CGY2013G
AC CHARACTERISTICS
VDD = 3.6 V; Tamb = 25 °C; VGG1 = VGG2 = −1.8 V; measured on Philips demoboard.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Power amplifier
Pi
fRF
Po(max)
input power
RF frequency range
maximum output power
η
Po(min)
NRX
efficiency
minimum output power
output noise in RX band
H2
H3
Stab
2nd harmonic level
3rd harmonic level
stability
Tamb = 25 °C; VDD = 3.6 V
Tamb = −20 to +85 °C; VDD = 3 V
VDD = 3.6 V
VDD < 0.1 V
fRF = 925 to 935 MHz at Po(max)
fRF = 935 to 960 MHz at Po(max)
note 1
−2
880
33.5
32
42
−
−
−
−
−
−
−
−
35.5
−
52
−20
−
−
−
−
−
+2
915
−
−
−
−15
−117
−125
−35
−35
−70
dBm
MHz
dBm
dBm
%
dBm
dBm/Hz
dBm/Hz
dBc
dBc
dBc
Note
1. The device is adjusted to provide nominal value of load power into a 50 Ω load. The device is switched off and a 6 : 1
load replaces the 50 Ω load. The device is switched on and the phase of the 6 : 1 load is varied
360 electrical degrees during a 60 second period.
1998 Jan 23
6