STJ730-090 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
STJ730-090 Datasheet PDF : 3 Pages
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Thick Film Hybrid IC
INCHANGE
Specifications
Maximum Ratings at Ta=25℃, Tc=25℃ unless otherwise specified
Parameter
Operating substrate temperature
AC input voltage
Operating temperature
Storage temperature
Maximum output power
(TR1)
Drain current
Pulse drain current
Drain reverse current
Gate-source voltage
Allowable power dissipation
Chip junction temperature
Thermal resistance
(ZD1)
Allowable power dissipation
Chip junction temperature
Thermal resistance
Symbol
TC max
VAC
Topr
Tstg
Wo max
ID
ID(Pulse)
IDR
VGSS
PD
Tj max
θj-c
Conditions
Recommended value is 105℃
Specified test circuit
Specified test circuit VO=135V
PZD1
Tj(ZD1)max
θj-c(ZD1)
Ratings
115
140
-10 to+85
-30 to+115
110
UNIT
℃
Vrms
℃
℃
W
6
20
6
±30
78.1
150
1.6
A
A
A
V
W
℃
℃/W
500
mW
125
℃
0.2
℃/mW
Allowable operating ranges at Ta=25℃
Parameter
Pin 4 input voltage
Oscillator frequency
Symbol
V4
fOSC
Conditions
Ratings
±8 to±24
20 to 120
UNIT
V
kHz
Operating characteristics at Ta=25℃Tc=25℃
( unless otherwise specified,specified test circuits)
Parameter
Symbol
Conditions
min
Output voltage setting
Output voltage temperature coefficient
(TR1)
IIN=8mA
TC=0 to 105℃, IIN=8mA
40.0
Drain-source breakdown voltage
Gate-source cutoff voltage
ON resistance
Input capacitance
(ZD1)
V(BR)DSS ID=10mA,VGS=0V
500
VGS(off)
ID=1mA,VDS=10V
2.0
RDS(on)
ID=2.5A,VGS=10V
Ciss
VDS=10V,VGS=0V,f=1MHz
Zener voltage
VZ
IZ=5mA
23.7
Typ max UNIT
40.5 41.0
V
7
mV/℃
V
3.0
V
1.4
1.8
Ω
800
pF
26.3
V
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