T2500D View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
T2500D Datasheet PDF : 4 Pages
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T2500D
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current TJ = 25°C
(Rated VDRM, VRRM; Gate Open) TJ = 100°C
ON CHARACTERISTICS
IDRM,
−
−
10
mA
IRRM
2.0
mA
Peak On-State Voltage (Note 2)
(ITM = "30 A Peak)
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
VTM
−
−
2.0
V
IGT
mA
−
10
25
−
20
60
−
15
25
−
30
60
Gate Trigger Voltage (Continuous dc) (All Four Quadrants)
(VD = 12 Vdc, RL = 100 W)
Gate Non−Trigger Voltage
(VD = 12 V, RL = 100 W, TC = 100°C)
Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = "200 mA)
VGT
−
1.25
2.5
V
VGD
0.2
−
−
V
IH
−
15
30
mA
Gate Controlled Turn-On Time
(Rated VDRM, IT = 10 A , IGT = 160 mA, Rise Time = 0.1 ms)
DYNAMIC CHARACTERISTICS
tgt
−
1.6
−
ms
Critical Rate-of-Rise of Commutation Voltage
dv/dt(c)
−
10
−
V/ms
(Rated VDRM, IT(RMS) = 6 A, Commutating di/dt = 3.2 A/ms, Gate Unenergized,
TC = 80°C)
Critical Rate-of-Rise of Off-State Voltage
(Rated VDRM, Exponential Voltage Rise, Gate Open, TC = 100°C)
2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
dv/dt
−
75
−
V/ms
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