LT1162 View Datasheet(PDF) - Linear Technology
Part Name
Description
Manufacturer
LT1162 Datasheet PDF : 16 Pages
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LT1160/LT1162
ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C.Test Circuit, TA = 25°C, V + = VBOOST = 12V, VTSOURCE = 0V, CGATE =
3000pF. Gate Feedback pins connected to Gate Drive pins, unless otherwise specified.
SYMBOL PARAMETER
IUVOUT
VUVOUT
VOH
Undervoltage Output Leakage
Undervoltage Output Saturation
Top Gate ON Voltage
Bottom Gate ON Voltage
VOL
Top Gate OFF Voltage
Bottom Gate OFF Voltage
tr
Top Gate Rise Time
Bottom Gate Rise Time
tf
Top Gate Fall Time
Bottom Gate Fall Time
t D1
Top Gate Turn-On Delay
Bottom Gate Turn-On Delay
t D2
Top Gate Turn-Off Delay
Bottom Gate Turn-Off Delay
t D3
Top Gate Lockout Delay
Bottom Gate Lockout Delay
t D4
Top Gate Release Delay
Bottom Gate Release Delay
CONDITIONS
V + = 15V
V + = 7.5V, IUVOUT = 2.5mA
VINTOP = 2V, VINBOTTOM = 0.8V
VINTOP = 0.8V, VINBOTTOM = 2V
VINTOP = 0.8V, VINBOTTOM = 2V
VINTOP = 2V, VINBOTTOM = 0.8V
VINTOP (+) Transition, VINBOTTOM = 0.8V,
Measured at VTGATE DR (Note 5)
VINBOTTOM (+) Transition, VINTOP = 0.8V,
Measured at VBGATE DR (Note 5)
VINTOP (–) Transition, VINBOTTOM = 0.8V,
Measured at VTGATE DR (Note 5)
VINBOTTOM (–) Transition, VINTOP = 0.8V,
Measured at VBGATE DR (Note 5)
VINTOP (+) Transition, VINBOTTOM = 0.8V,
Measured at VTGATE DR (Note 5)
VINBOTTOM (+) Transition, VINTOP = 0.8V,
Measured at VBGATE DR (Note 5)
VINTOP (–) Transition, VINBOTTOM = 0.8V,
Measured at VTGATE DR (Note 5)
VINBOTTOM (–) Transition, VINTOP = 0.8V,
Measured at VBGATE DR (Note 5)
VINBOTTOM (+) Transition, VINTOP = 2V,
Measured at VTGATE DR (Note 5)
VINTOP (+) Transition, VINBOTTOM = 2V,
Measured at VBGATE DR (Note 5)
VINBOTTOM (–) Transition, VINTOP = 2V,
Measured at VTGATE DR (Note 5)
VINTOP (–) Transition, VINBOTTOM = 2V,
Measured at VBGATE DR (Note 5)
MIN TYP MAX
●
0.1 5
●
0.2 0.4
● 11 11.3 12
● 11 11.3 12
●
0.4 0.7
●
0.4 0.7
●
130 200
●
90 200
●
60 140
●
60 140
●
250 500
●
200 400
●
300 600
●
200 400
●
300 600
●
250 500
●
250 500
●
200 400
UNITS
µA
V
V
V
V
V
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: For the LT1160, Pins 1, 10 should be connected together. For the
LT1162, Pins 1, 7, 14, 20 should be connected together.
Note 3: TJ is calculated from the ambient temperature TA and power
dissipation PD according to the following formulas:
LT1160CN/LT1160IN: TJ = TA + (PD)(70°C/W)
LT1160CS/LT1160IS: TJ = TA + (PD)(110°C/W)
LT1162CN/LT1162IN: TJ = TA + (PD)(58°C/W)
LT1162CS/LT1162IS: TJ = TA + (PD)(80°C/W)
Note 4: IS is the sum of currents through SV +, PV + and Boost pins.
IBOOST is the current through the Boost pin. Dynamic supply current is
higher due to the gate charge being delivered at the switching frequency.
See Typical Performance Characteristics and Applications Information
sections. The LT1160 = 1/2 LT1162.
Note 5: See Timing Diagram. Gate rise times are measured from 2V to 10V
and fall times are measured from 10V to 2V. Delay times are measured
from the input transition to when the gate voltage has risen to 2V or
decreased to 10V.
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