LT1160 View Datasheet(PDF) - Linear Technology

Part Name

Description

Manufacturer

LT1160

Half-/Full-Bridge N-Channel Power MOSFET Drivers

Linear Technology 

LT1160/LT1162

WU

W

TI I G DIAGRA

2V

IN TOP

0.8V

2V

IN BOTTOM

0.8V

12V

TOP GATE

DRIVER

0V

tr

tD3

tD2

12V

BOTTOM

10V

GATE

DRIVER 0V

2V

tD1

tf

tD4

tr

tD3

tD2

10V

2V

tD1

tf

tD4

1160/62 TD

U

OPERATIO (Refer to Functional Diagram)

The LT1160 (or 1/2 LT1162) incorporates two indepen-

dent driver channels with separate inputs and outputs. The

inputs are TTL/CMOS compatible; they can withstand

input voltages as high as V+. The 1.4V input threshold is

regulated and has 300mV of hysteresis. Both channels are

noninverting drivers. The internal logic prevents both

outputs from simultaneously turning on under any input

conditions. When both inputs are high both outputs are

actively held low.

The floating supply for the top driver is provided by a

bootstrap capacitor between the Boost pin and the Top

Source pin. This capacitor is recharged each time the

negative plate goes low in PWM operation.

The undervoltage detection circuit disables both channels

when V+ is below the undervoltage trip point. A separate

UV detect block disables the high side channel when

VBOOST – VTSOURCE is below its own undervoltage trip

point.

The top and bottom gate drivers in the LT1160 each utilize

two gate connections: 1) a gate drive pin, which provides

the turn on and turn off currents through an optional series

gate resistor, and 2) a gate feedback pin which connects

directly to the gate to monitor the gate-to-source voltage.

Whenever there is an input transition to command the

outputs to change states, the LT1160 follows a logical

sequence to turn off one MOSFET and turn on the other.

First, turn-off is initiated, then VGS is monitored until it has

decreased below the turn-off threshold, and finally the

other gate is turned on.

11602fb

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