TIP122L View Datasheet(PDF) - Unisonic Technologies

Part Name

Description

Manufacturer

TIP122L

NPN EPITAXIAL TRANSISTOR

Unisonic Technologies 

TIP122

NPN SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

Collector to Emitter Voltage

VCBO

100

V

VCEO

100

V

Emitter to Base Voltage

IC Collector Current

VEBO

5

V

IC

5

A

TO-126

36

W

Power Dissipation (TC=25°C)

TO-220

TO-220F

PD

65

W

34

W

TO-252

38

W

Junction Temperature

Storage Temperature

TJ

TSTG

+150

°C

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA=25°C)

PARAMETER

Collector-Emitter Breakdown Voltage

Collector-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Collector Cut-Off Current

Collector-Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

SYMBOL

BVCEO

VCE(SAT)1

VCE(SAT)2

VBE(ON)

ICBO

ICEO

IEBO

hFE

TEST CONDITIONS

IC=100mA

IC=3A, IB=12mA

IC=5A, IB=20mA

VCE=3V, IC=3A

VCB=100V

VCE=50V

VEB=5V

IC=500mA, VCE=3V

IC=3A, VCE=3V

MIN TYP MAX UNIT

100

V

2V

4V

2.5 V

200 uA

500 uA

2 mA

1000

1000

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R204-016.E

Share Link: