US1A-E3(2007) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
US1A-E3 Datasheet PDF : 5 Pages
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US1A thru US1M
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL US1A US1B US1D US1G
Maximum instantaneous
forward voltage (1)
1.0 A
VF
1.0
Maximum DC reverse current at
rated DC blocking voltage
TA = 25 °C
TA = 100 °C
IR
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
Typical junction capacitance
4.0 V, 1 MHz
CJ
10
50
50
15
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
US1J
US1K
1.7
75
10
US1M UNIT
V
µA
ns
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL US1A US1B US1D
Maximum thermal resistance (1)
Note:
RθJA
RθJL
(1) P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad area
US1G
75
27
US1J
US1K
US1M UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
US1J-E3/61T
0.064
61T
US1J-E3/5AT
0.064
5AT
US1JHE3/61T (1)
0.064
61T
US1JHE3/5AT (1)
0.064
5AT
Note:
(1) Automotive grade AEC Q101 qualified
BASE QUANTITY
1800
7500
1800
7500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1.2
Resistive or Inductive Load
1.0
0.8
0.6
0.4
0.2
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0
0
25
50
75
100 125 150
Lead Temperature (°C)
Figure 1. Forward Current Derating Curve
30
TL = 110 °C
25
8.3 ms Single Half Sine-Wave
20
15
10
5
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88768
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 27-Aug-07
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