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US1A View Datasheet(PDF) - Yea Shin Technology Co., Ltd

Part Name
Description
Manufacturer
US1A
YEASHIN
Yea Shin Technology Co., Ltd YEASHIN
US1A Datasheet PDF : 2 Pages
1 2
SEMICONDUCTOR
DATA SHEET
US1A~US1M
SURFACE MOUNT REVERSE VOLTAGE - 50 to 1000 Volts
ULT RA FAST RECTI FIERS FORWARD CURRENT - 1.0 Ampere
FEATURES
Glass passivated chip
Ultra fast switching for high efficiency
For surface mounted applications
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification 94V-0
High temperature soldering : 260OC°C1/0 seconds at terminals
Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
MECHANCALDATA
Case: ITO-220AB full molded plastic package
Case : Molded plastic
Polarity : Indicated by cathode band
Weight : 0.002 ounces, 0.064 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SMA/DO-214AC Unit:inch(mm)
.062(1.60)
.047(1.20)
.114(2.90)
.098(2.50)
.181(4.60)
.157(4.00)
.096(2.44)
.078(2.00)
.060(1.52)
.030(0.76)
.008(.203 )
.002(.051)
.208(5.28)
.188(4.80)
.012(.305)
.006(.152)
CHARACTERISTICS
SYMBOL US1A US1B US1D US1G US1J
Maximum Recurrent Peak Reverse V oltage
VRRM
50
100
200
400
600
Maximum RMS Voltage
VRMS
35
70
140
280
420
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
Maximum Average Forward
IAV
1.0
Rectified Current @TL =75°C
Peak Forward Surge Current
8.3ms single half sine- wave
IFSM
30
superimposed on rated load (JEDEC METHOD)
Maxi mum f orward Voltage at 1.0A DC
VF
1.0
1.3
1.5
Maxi mum DC Reverse Cur rent @TJ =25°C
5
IR
at Rated DC Blocking Voltage
@TJ =100 °C
100
Maximum Reverse Recovery Time (Note 1)
CJ
20
Typical Junction
Capacitance (Note 2)
TRR
50
Typical Thermal Resistance (Note 3 )
R JC
30
Operati ng Temperature Range
TJ
-55 to +150
Storage Temperature Range
TSTG
-55 to +150
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A.
3. Thermal resistance from Junction to ambient and from junction to lead 0.375” (9.5mm) P.C.B mounted.
US1K US1M UNITS
800
1000
V
560
700
V
800
1000
V
A
1.7
10
75
A
V
µA
pF
ns
°C/W
°C
°C
http://www.yeashin.com
1
REV.02 20110725

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