WFU4N60(2010) View Datasheet(PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
Part Name
Description
Manufacturer
WFU4N60 Datasheet PDF : 7 Pages
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Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol Test Condition
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
Gate−source breakdown voltage
V(BR)GSS IG = ±10 μA, VDS = 0 V
Drain cut−off current
VDS = 600 V, VGS = 0 V
IDSS
VDS = 480 V, Tc = 125°C
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn−on time
Fall time
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
V(BR)DSS
VGS(th)
RDS(ON)
Ciss
Crss
Coss
tr
ton
tf
toff
Qg
Qgs
Qgd
ID = 250 μA, VGS = 0 V
VDS = 10 V, ID =250 μA
VGS = 10 V, ID =3.25A
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD =300 V,
ID = 4.4 A
RG=25 Ω
(Note4,5)
VDD = 480 V,
VGS = 10 V,
ID =4.4A
(Note4,5)
WFU4N60
Min Type Max Unit
-
-
±100
nA
±30
-
-
V
-
-
10
μA
-
-
100
μA
600
-
-
V
2
-
4
V
-
1.8
2.5
Ω
-
545
670
-
7
10
pF
-
70
90
-
10
30
-
35
80
ns
-
45
100
-
20
50
-
16
20
nC
-
3.4
-
-
7
-
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Continuous drain reverse current
IDR
-
-
Pulse drain reverse current
IDRP
-
-
Forward voltage (diode)
VDSF
IDR =4.4 A, VGS = 0 V
-
Reverse recovery time
trr
IDR = 4.4 A, VGS = 0 V,
-
Reverse recovery charge
Qrr
dIDR / dt = 100 A / μs
-
Type
-
-
-
390
2.2
Max
4
17.6
1.4
-
-
Unit
A
A
V
ns
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH,IAS=4.4A,VDD=50V,RG=0Ω,Starting TJ=25℃
3.ISD≤4A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
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