WFU4N60 View Datasheet(PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
Part Name
Description
Manufacturer
WFU4N60 Datasheet PDF : 8 Pages
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WFU4N60 Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
IGSS
Gate-source breakdown voltage
V(BR)GSS
Drain Cut -off current
IDSS
Test Condition
VGS=±30V,VDS=0V
IG=±10 µA,VDS=0V
VDS=600V,VGS=0V
VDS=500V,Tc=125℃
Min Type Max Unit
-
-
±100
nA
±30
-
-
V
-
-
10
µA
-
-
100
µA
Breakdown voltage Temperature coefficient △BVDSS/△TJ ID=250 µA,Referenced to 25℃
-
0.65
-
V/℃
Drain -source breakdown voltage
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Turn-on Rise time
Switching time
Turn-on delay time
Turn-off Fall time
Turn-off delay time
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
V(BR)DSS
VGS(th)
RDS(ON)
gfs
Ciss
Crss
Coss
tr
Td(on)
tf
Td(off)
Qg
Qgs
Qgd
ID=250 µA,VGS=0V
VDS=VGS,ID=250 µA
VGS=10V,ID=2.0A
VDS=40V,ID=2.0A
VDS=25V,
VGS=0V,
f=1MHz
VDD=325V,
ID=4.0A
RG=25Ω
(Note4,5)
VDD=480V,
VGS=10V,
ID=4.0A
(Note,5)
600
-
-
V
2
-
4
V
-
-
2.3
Ω
-
4.7
-
S
-
550
720
-
8
11
pF
-
60
80
-
35
80
-
10
30
ns
-
40
90
-
60
100
-
15
20
nC
-
2.8
-
-
6
-
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Continuous drain reverse current
IDR
-
Pulse drain reverse current
IDRP
-
Forward voltage(diode)
VDSF
IDR=4.0A,VGS=0V
Reverse recovery time
Reverse recovery charge
trr
IDR=4.0A,VGS=0V,
Qrr
dIDR /dt =100 A /µs
Min Type Max Unit
-
-
4.0
A
-
-
16
A
-
-
1.4
V
-
300
-
ns
-
2.2
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=25mH IAS=4.0A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤4.0A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
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